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POWERSTEP01 数据表(PDF) 34 Page - STMicroelectronics

部件名 POWERSTEP01
功能描述  System-in-package integrating microstepping controller and 10 A power MOSFETs
PDF  92 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

POWERSTEP01 数据表(HTML) 34 Page - STMicroelectronics

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Functional description
powerSTEP01
34/92
DocID025022 Rev 5
The switch input can be used by GoUntil and ReleaseSW commands as described in
Section 11.2.10 on page 78 and Section 11.2.11 on page 79.
If the SW input is not used, it should be connected to VDD.
Figure 14. External switch connection
7.15
Integrated power MOSFETs
The typical characteristics of the 8 N-channel MOSFETs integrated into the system-in-
package are listed in Table 10.
7.16
Programmable slew rate
The powerSTEP01 integrates eight programmable gate drivers which allow the output slew
rate to be fixed in a wide range of values.
The following parameters can be adjusted:
–
Gate sink/source current (IGATE)
–
controlled current time (tCC)
–
Turn-off over-boost time (tOB).
During the turn-on, the gate driver charges the gate forcing an IGATE current for all the
controlled current time period. At the end of the controlled current phase the gate of the
integrated MOSFET should be completely charged.
During the turn-off the gate driver discharges the gate sinking an IGATE current for all the
controlled current time period. At the beginning of the turn-off an overboost phase can be
added: in this case the gate driver sinks an IOB current for the programmed tOB period in
order to rapidly reach the plateau region. At the end of the controlled current time the gate of
the integrated MOSFET should be completely discharged.
AM12833v1
External
switch
SW
V
DD
Table 10. Integrated MOSFETs characteristics at Tj = 25 °C
Symbol
Parameter
Typical value
Unit
VGS(th)
Gate threshold voltage
3
V
Qg
Total gate charge at Vgs = 10 V
25
nC
VSD
Source-drain diode forward on voltage at ISD = 10 A
0.8
V



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