DocID024491 Rev 2

3/15

STB9NK80Z

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain-source voltage

800

V

V

GS

Gate- source voltage

± 30

V

I

D

Drain current (continuous) at T

C

= 25 °C

5.2

A

I

D

Drain current (continuous) at T

C

= 100 °C

3.3

A

I

DM

(1)

1.

Pulse width limited by junction temperature.

Drain current (pulsed)

20.8

A

P

TOT

Total dissipation at T

C

= 25°C

125

W

Derating factor

1

W/°C

ESD

Gate-source human body model (C = 100 pF, R = 1.5 k

Ω)4

kV

dv/dt

(2)

2.

I

SD

≤ 5.2 A, di/dt ≤ 200 A/μs, V

DD

≤ V

(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

T

j

T

stg

Max operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case max

1

°C/W

R

thj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

I

AR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

5.2

A

E

AS

Single pulse avalanche energy

(starting T

J

= 25 °C, I

D

= I

AR

, V

DD

= 50 V)

210

mJ