Electrical characteristics

STB9NK80Z

4/15

DocID024491 Rev 2

2

Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

Breakdown voltage

I

D

=1 mA, V

GS

= 0

800

V

I

DSS

Zero gate voltage

Drain Current (V

GS

= 0)

V

DS

= 800 V

V

DS

= 800 V, T

C

= 125 °C

1

50

μA

μA

I

GSS

Gate-body leakage

Current (V

DS

= 0)

V

GS

= ± 20 V

± 10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 100 μA

3

3.75

4.5

V

R

DS(on)

Static drain-source on

resistance

V

GS

= 10 V, I

D

= 2.6 A

1.5

1.8

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

g

fs

(1)

1.

Pulsed: pulse duration=300μs, duty cycle 1.5%

Forward transconductance

V

DS

= 15 V, I

D

= 2.6 A

-

5

-

S

C

iss

Input capacitance

V

DS

= 25 V, f = 1 MHz,

V

GS

= 0

-1138

-

pF

C

oss

Output capacitance

-

122

-

pF

C

rss

Reverse transfer

capacitance

-25

-

pF

C

oss eq.

(2)

2.

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

.

Equivalent output

capacitance

V

DS

=0 , V

DS

= 0 to 640 V

-

50

-

pF

t

d(on)

Turn-on delay time

V

DD

= 400 V, I

D

= 2.6 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 15)

-20

-

ns

t

r

Rise time

-

12

-

ns

t

r(off)

Turn-off delay time

-

45

-

ns

t

r

Fall time

-

22

-

ns

Q

g

Total gate charge

V

DD

= 640 V, I

D

= 2.6 A,

V

GS

= 10 V

(see

Figure 16)

-40

-

nC

Q

gs

Gate-source charge

-

7

-

nC

Q

gd

Gate-drain charge

-

2.1

-

nC

t

r(Voff)

Off-voltage rise time

V

DD

= 640 V, I

D

= 2.6 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 15)

-12

-

ns

t

r

Fall time

-

10

-

ns

t

c

Cross-over time

-

20

-

ns