This is information on a product in full production.

July 2013

DocID024491 Rev 2

1/15

15

STB9NK80Z

Automotive-grade N-channel 800 V, 1.5

Ω typ., 5.2 A

Zener-protected SuperMESH™ Power MOSFETs in D

2

PAK package

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Extremely high dv/dt capability

• 100% avalanche tested

• Gate charge minimized

• Zener-protected

• Very low intrinsic capacitances

Applications

• Switching application

Description

This device is an N-channel Zener-protected

Power MOSFET developed using

STMicroelectronics' SuperMESH™ technology,

achieved through optimization of ST's well

established strip-based PowerMESH™ layout. In

addition to a significant reduction in on-

resistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

1

3

TAB

AM01476v1

Type

(@Tjmax)

max.

STB9NK80Z

800V

1.8

Ω

5.2A

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB9NK80Z

B9NK80Z

D²PAK

Tape and reel

www.st.com