DocID024491 Rev 2

5/15

STB9NK80Z

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

I

SDM

(1)

1.

Pulsed: pulse duration=300μs, duty cycle 1.5%

Source-drain current

Source-drain current (pulsed)

-

5.2

20.8

A

A

V

SD

(2)

2.

Pulse width limited by safe operating area

Forward on voltage

I

SD

= 5.2 A, V

GS

= 0

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 5.2 A, di/dt = 100

A/μs

V

DD

= 50 V, Tj = 150°C

(see

Figure 20)

-

530

ns

Q

rr

Reverse recovery charge

-

3.31

μC

I

RRM

Reverse recovery current

-

12.5

A

Table 8. Gate-source zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR) GSO

Gate-source breakdown voltage

I

D

= 0

I

GS

= ± 1mA

30

V