STS7P4LLF6

Electrical ratings

DocID025619 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

40

V

Gate-source voltage

± 20

V

7

A

4.2

A

IDM

(1)

Drain current (pulsed)

28

A

2.7

W

Storage temperature

-55 to 150

°C

Maximum junction temperature

150

°C

Notes:

(1)

Pulse width limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

(1)

Thermal resistance junction-amb

47

°C/W

Notes:

(1)

When mounted on 1 inch² FR-4 board, 2 oz. Cu., t

≤ 10 s

For the P-channel Power MOSFET, current polarity of voltages and current have

to be reversed.