March 2015

DocID025619 Rev 2

1/13

This is information on a product in full production.

www.st.com

STS7P4LLF6

P-

channel 40 V, 0.0175 Ω typ.,7 A, STripFET™ F6

Power MOSFET in an SO-8 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STS7P4LLF6

40 V

0.0205 Ω

7 A

•

Very low on-resistance

•

Very low gate charge

•

High avalanche ruggedness

•

Low gate drive power loss

Applications

•

Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

packages.

For the P-channel Power MOSFET, current

polarity of voltages and current have to be

reversed.

Table 1: Device summary

Order code

Marking

Package

Packaging

STS7P4LLF6

7K4L

SO-8

Tape and reel