Electrical characteristics

STS7P4LLF6

4/13

DocID025619 Rev 2

2

Electrical characteristics

Table 4: Static

Symbol

Parameter

Test conditions

Min

.

Typ.

Max.

Unit

Drain-source breakdown

voltage

40

V

Zero gate voltage Drain

current

1

µA

10

µA

Gate-body leakage

current

±100

nA

Gate threshold voltage

1

V

Static drain-source on-

resistance

0.0175

0.0205

Ω

0.0205

0.029

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-

2850

-

pF

Output capacitance

-

270

-

pF

Reverse transfer

capacitance

-

180

-

pF

Total gate charge

14: "Gate charge test

circuit")

-

22

-

nC

Gate-source charge

-

9.4

-

nC

Gate-drain charge

-

7.3

-

nC

Gate input resistance

bias = 0 V, f = 1 MHz,

magnitude of alternative

signal = 20 mV

-

1.4

-

Ω

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 13:

"Switching times test

circuit for resistive load")

-

43

-

ns

Rise time

-

47

-

ns

Turn-off-delay time

-

148

-

ns

Fall time

-

19

-

ns

For the P-channel Power MOSFET, current polarity of voltages and current have

to be reversed.