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UT130NHBD 数据表(PDF) 7 Page - Aeroflex Circuit Technology

部件名 UT130NHBD
功能描述  Hardened-by-Design (HBD) Standard Cell
PDF  8 Pages
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制造商  AEROFLEX [Aeroflex Circuit Technology]
网页  http://www.aeroflex.com
标志 AEROFLEX - Aeroflex Circuit Technology

UT130NHBD 数据表(HTML) 7 Page - Aeroflex Circuit Technology

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Data from the wafer-level testing can provide rapid feedback to the fabrication process, as well as establish the reliability perfor-
mance of the product before it is packaged and shipped.
RADIATION TOLERANCE
Aeroflex incorporates radiation-tolerance techniques in process design, design rules, array design, power distribution and library
element design. All key radiation-tolerance process parameters are controlled and monitored using statistical methods and in-line
testing (Table 3).
Notes:
1.Total dose Co-60 testing is in accordance with MIL-STD-883, Method 1019.
2.TID data measured at 1.35V core/3.6V I/ O VDDIO. All post radiation values measured at 25°C.
3.SEU limit based on standard evaluation circuit at 1.1V core/3.0V I/ O VDDIO 25°C condition.
4.SEU-hard flip-flop cell. Non-hard flip-flop typical is 5x10-8.
5.SEL data measured at 1.3V core/3.6V I/ O VDDIO and 125°C.
Intel is a registered trademark of Intel Corporation
Mentor, Mentor Graphics, FastScan, FlexTest and DFT Advisor are registered trademarks of Mentor Graphics Corporation
Sun is a registered trademark of Sun Microsystems, Inc.
Synopsys, Design Compiler, VHDL Compiler, HDL Compiler, Te
Table 3: Radiation Hardness
PARAMETER
RADIATION
TOLERANCE
NOTES
Total ionizing dose
100-300 krad(Si)
1,2
Single event upset (SEU)
<1.0x10-10 errors per cell-day
3,4
Single event latchup (SEL)
Latchup immune to LET =
115 MeV/cm2/mg
5



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