LP8556 datasheet(37/63 Pages) TI1

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LP8556

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SNVS871I – JULY 2012 – REVISED MARCH 2016

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8.6.2.3 LP8556SQ (WQFN) Configurations and Pre-configured EPROM Settings

ADDRESS

LP8556-E00

LP8556-E08

LP8556-E09

98h[7]

9Eh

22h

A0h

FFh

A1h

CFh

A2h

2Fh

A3h

5Eh

02h

A4h

72h

A5h

14h

24h

04h

A6h

80h

A7h

F6h

A9h

A0h

AAh

0Fh

ABh

00h

ACh

00h

ADh

00h

AEh

0Fh

AFh

01h

(1)

1.8 A is the maximum ISW_LIM supported with the DSBGA package. For applications requiring the ISW_LIM to be greater than 1.8 A and

up to 2.6 A, WQFN package should be considered.

8.6.2.4 CFG98

Address 98h

CFG98 REGISTER

IBOOST_LIM_2X

NAME

BIT

ACCESS

DESCRIPTION

IBOOST_LIM_2X

R/W

Select the inductor current limit range.

When IBOOST_LIM_2X = 0, the inductor current limit can be set to 0.9 A, 1.2 A, 1.5 A or 1.8

When IBOOST_LIM_2X = 1, the inductor current limit can be set to 1.6 A, 2.1 A, or 2.6 A .

This option is supported only on WQFN package and not on DSBGA package. See (1).

8.6.2.5 CFG9E

Address 9Eh

CFG9E REGISTER

VBOOST_RANGE

HEADROOM_OFFSET

NAME

BIT

ACCESS

DESCRIPTION

VBOOST_RANGE

R/W

Select VBOOST range.

When VBOOST_RANGE = 0, the output voltage range is from 7 V to 34 V

When VBOOST_RANGE = 1, the output voltage range is from 16 V to 43 V

HEADROOM_

OFFSET

3:0

R/W

LED driver headroom offset. This adjusts the LOW comparator threshold together

with LED_HEADROOM bits and contributes to the MID comparator threshold.

0000 = 460 mV

0001 = 390 mV

0010 = 320 mV

0100 = 250 mV

1000 = 180 mV

LP8556 数据表(PDF) 37 Page - Texas Instruments

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