LP8556 datasheet(6/63 Pages) TI1

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LP8556

SNVS871I – JULY 2012 – REVISED MARCH 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability, see the

Electrical Characteristics tables.

(2)

If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =

125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the

part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

VDD

–0.3

Voltage on Logic Pins (SCL, SDA, PWM)

–0.3

Voltage on Analog Pins (VLDO, EN / VDDIO)

–0.3

Voltage on Analog Pins (FSET, ISET)

–0.3

VLDO + 0.3

V (LED1...LED6, SW, VBOOST)

–0.3

Junction Temperature (TJ-MAX)

(3)

125

°C

Maximum Lead Temperature (Soldering)

260

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

(1)

All voltages are with respect to the potential at the GND pins.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VDD

2.7

EN / VDDIO

1.62

3.6

V (LED1...LED6, SW, VBOOST)

Junction temperature, TJ

–30

125

°C

Ambient temperature, TA

–30

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

7.4 Thermal Information

THERMAL METRIC(1)

LP8556

UNIT

YFQ (DSBGA)

RTW (WQFN)

20 PINS

24 PINS

RθJA

Junction-to-ambient thermal resistance

66.2

35.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

0.5

32.2

°C/W

RθJB

Junction-to-board thermal resistance

15.1

13.7

°C/W

ψJT

Junction-to-top characterization parameter

1.9

0.3

°C/W

ψJB

Junction-to-board characterization parameter

15.0

13.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

3.3

°C/W

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