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STV0674

Detailed Specifications

4.4.8

AC characteristics for operation

Note: 1 All parameters relating to the CE_n signal are omitted as it is not enabled/disabled during execution

of any NAND flash operation.

2 All timings are worst case.

3 Conforms to both Samsung and Toshiba specifications as outlined in datasheets

Table 3: AC characteristics

Symbol

Parameter

Min

Typical

Max

Unit

CLE set-up time

61.36

62.4

ns

CLE hold time

83.2

ns

WE-n pulse width

83.2

ns

ALE set-up time

82.64

83.2

ns

ALE hold time

82.44

83.2

ns

Data set-up time

82.65

83.2

ns

Data hold time

61.85

62.4

ns

Write cycle time

145.09

145.6

ns

WE_n high hold time

61.89

62.4

ns

Ready to RE_n low

80.99

83.2

ns

RE_n pulse width

83.2

ns

Read cycle time

187.2

ns

RE_n access time

35

43.2

ns

RE_n high hold time

103.47

104

ns

WE_n high to RE_n low

124.22

124.8

ns

Data transfer from cell to register

25.015

µs

WE_n high to busy

41.6

215.28

ns

Device resetting (Read)

5.015

µs