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CC1050-RTR1 数据表(PDF) 4 Page - Texas Instruments

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部件名 CC1050-RTR1
功能描述  Single Chip Very Low Power RF Transmitter
PDF  40 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CC1050-RTR1 数据表(HTML) 4 Page - Texas Instruments

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CC1050
SWRS044
Page 4 of 40
Absolute Maximum Ratings
Parameter
Min.
Max.
Units
Condition
Supply voltage, VDD
-0.3
5.0
V
Voltage on any pin
-0.3
VDD+0.3,
max 5.0
V
Input RF level
10
dBm
Storage temperature range
-50
150
°C
Reflow soldering temperature
260
°C
T = 10 s
Under no circumstances the absolute
maximum ratings given above should be
violated. Stress exceeding one or more of
the limiting values may cause permanent
damage to the device.
Caution! ESD sensitive device.
Precaution should be used when handling
the device in order to prevent permanent
damage.
Operating Conditions
Parameter
Min.
Typ.
Max.
Unit
Condition / Note
RF Frequency Range
300
1000
MHz
Programmable in steps of 250 Hz
Operating ambient temperature range
-40
85
°C
Supply voltage
2.1
3.0
3.6
V
Note: The same supply voltage
should be used for digital (DVDD)
and analogue (AVDD) power.
Electrical Specifications
Tc = 25
°C, VDD = 3.0 V if nothing else stated
Parameter
Min.
Typ.
Max.
Unit
Condition / Note
Transmit Section
Transmit data rate
0.6
76.8
kBaud
NRZ or Manchester encoding.
76.8 kBaud equals 76.8 kbit/s
using NRZ coding. See page 15.
Binary FSK frequency separation
0
65
kHz
The frequency separation is
programmable in 250 Hz steps.
65 kHz is the maximum
guaranteed separation at 1 MHz
reference frequency. Larger
separations can be achieved at
higher reference frequencies.
Output power
433 MHz
868 MHz
-20
-20
12
8
dBm
dBm
Delivered to 50
Ω load.
The output power is
programmable.
RF output impedance
433/868 MHz
110 / 70
Ω
Transmit mode. For matching
details see p.24.
Not Recommended for New Designs



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