bq78350-R1

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SLUSCD0 – AUGUST 2015

Typical Applications (continued)

10.2.2 Design Requirements

Table 1 lists the device's default settings and feature configurations when shipped from Texas Instruments.

Table 1. TI Default Settings

Design Parameter

Value or State

Cell Configuration

5s2p (5-series with 1 Parallel)

Design Capacity

4400 mAh

Device Chemistry

Chem ID 1210 (LiCoO2/graphitized carbon)

Cell Overvoltage (per cell)

4250 mV

Cell Undervoltage (per cell)

2500 mV

Overcurrent in CHARGE Mode

6000 mA

Overcurrent in DISCHARGE Mode

–6000 mA

Over Load Current

0.017 V/Rsense across SRP, SRN

Short Circuit in DISCHARGE Mode

0.44 V/Rsense across SRP, SRN

Over Temperature in CHARGE Mode

55°C

Over Temperature in DISCHARGE Mode

55°C

SAFE Pin Activation Enabled

No

Safety Over Voltage (per cell)

4400 mV

Safety Under Voltage (per cell)

2500 mV

Shutdown Voltage

2300 mV

Cell Balancing Enabled

Yes

Internal or External Temperature Sensor

External Enabled

SMB BROADCAST Mode

Disabled

Display Mode (# of Bars and LED or LCD)

5-bar LED

Dynamic SMB Address Enabled

No (SMB Address = 0x16)

KEYIN Feature Enabled

No

PRES Feature Enabled

No

10.2.3 Detailed Design Procedure

By default, the bq78350-R1 is initially setup to keep the CHG, DSG, and PCHG FETs OFF and many other

features disabled until the appropriate ManufacturingStatus() bit that enables ManufacturerAccess() commands

are received, or when the default Manufacturing Status is changed.

In the first steps to evaluating the bq78350-R1 and bq769x0 AFE, use the ManufacturerAccess() commands to

ensure correct operation of features, and if they are needed in the application. Then enable features' reading for

more in-depth application evaluation.

Prior to using the bq78350-R1, the default settings should be evaluated as the device has many configuration

settings and options. These can be separated into five main areas:

•

Measurement System

•

Gas Gauging

•

Charging

•

Protection

•

Peripheral Features

The key areas of focus are covered in the following sections.

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