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DP8573AV 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 DP8573AV
功能描述  Real Time Clock (RTC)
PDF  16 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DP8573AV 数据表(HTML) 3 Page - National Semiconductor (TI)

  DP8573AV Datasheet HTML 1Page - National Semiconductor (TI) DP8573AV Datasheet HTML 2Page - National Semiconductor (TI) DP8573AV Datasheet HTML 3Page - National Semiconductor (TI) DP8573AV Datasheet HTML 4Page - National Semiconductor (TI) DP8573AV Datasheet HTML 5Page - National Semiconductor (TI) DP8573AV Datasheet HTML 6Page - National Semiconductor (TI) DP8573AV Datasheet HTML 7Page - National Semiconductor (TI) DP8573AV Datasheet HTML 8Page - National Semiconductor (TI) DP8573AV Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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AC Electrical Characteristics
VCC e 5V g10% VBB e 3V VPFAIL l VIH CL e 100 pF (unless otherwise specified)
Symbol
Parameter
Min
Max
Units
READ TIMING
tAR
Address Valid Prior to Read Strobe
20
ns
tRW
Read Strobe Width (Note 8)
80
ns
tCD
Chip Select to Data Valid Time
80
ns
tRAH
Address Hold after Read (Note 9)
3
ns
tRD
Read Strobe to Valid Data
70
ns
tDZ
Read or Chip Select to TRI-STATE
60
ns
tRCH
Chip Select Hold after Read Strobe
0
ns
tDS
Minimum Inactive Time between Read or Write Accesses
50
ns
WRITE TIMING
tAW
Address Valid before Write Strobe
20
ns
tWAH
Address Hold after Write Strobe (Note 9)
3
ns
tCW
Chip Select to End of Write Strobe
90
ns
tWW
Write Strobe Width (Note 10)
80
ns
tDW
Data Valid to End of Write Strobe
50
ns
tWDH
Data Hold after Write Strobe (Note 9)
3
ns
tWCH
Chip Select Hold after Write Strobe
0
ns
INTERRUPT TIMING
tROLL
Clock rollover to INTR out typically 165 ms
Note 8
Read Strobe width as used in the read timing table is defined as the period when both chip select and read inputs are low Hence read commences when
both signals are low and terminates when either signal returns high
Note 9
Hold time is guaranteed by design but not production tested This limit is not used to calculate outgoing quality levels
Note 10
Write Strobe width as used in the write timing table is defined as the period when both chip select and write inputs are low Hence write commences when
both signals are low and terminates when either signal returns high
AC Test Conditions
Input Pulse Levels
GND to 30V
Input Rise and Fall Times
6 ns (10% – 90%)
Input and Output
13V
Reference Levels
TRI-STATE Reference
Active High a05V
Levels (Note 12)
Active Low b05V
Note 11
CL e 100 pF includes jig and scope capacitance
Note 12
S1 e VCC for active low to high impedance measurements
S1 e GND for active high to high impedance measurements
S1 e open for all other timing measurements
Capacitance (TA e 25 C f e 1 MHz)
Symbol
Parameter
Typ
Units
(Note 14)
CIN
Input Capacitance
5
pF
COUT
Output Capacitance
7
pF
Note 13
This parameter is not 100% tested
Note 14
Output rise and fall times 25 ns max (10%–90%) with 100 pF load
TLF9981 – 2
3



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