LP2996A

GND

+

+

+

SD

SD

LP2996A

GND

472F

+

+

+

2202F

SD

SD

0.012F

LP2996A

www.ti.com

SNOSCY7 – JUNE 2014

Application Information (continued)

(7)

The power dissipation of the LP2996A can also be calculated during the shutdown state. During this condition

any current (leakage is negligible). The only losses during shutdown will be the reduced quiescent current at

AVIN and the constant impedance that is seen at the VDDQ pin.

(8)

(9)

(10)

8.2 Typical Application

Several different application circuits are shown below to illustrate some of the options that are possible in

configuring the LP2996A. Graphs of the individual circuit performance can be found in the Typical Performance

Characteristics section in the beginning of the datasheet. These curves illustrate how the maximum output

current is affected by changes in AVIN and PVIN.

8.2.1 Typical Application Circuit

Figure 19. Typical Application Circuit

8.2.2 DDR-III Applications

With the separate VDDQ pin and an internal resistor divider it is possible to use the LP2996A in applications

utilizing DDR-III memory. The output stage is connected to the 1.5 V rail and the AVIN pin can be connected to a

2.2 V - 5.5 V rail.

Figure 20. Recommended DDR-III Termination

If it is not desirable to use the 1.5 V - 2.5 V rail it is possible to connect the output stage to a 3.3 V rail. Care

should be taken to not exceed the maximum junction temperature as the thermal dissipation increases with lower

V. The advantage of this configuration is that it has the ability to source and sink a higher maximum continuous

current.

Copyright © 2014, Texas Instruments Incorporated

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