2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V (SW, FB, WLED1-4, CLED1-2,

R1-2, G1-2, B1-2) pins:

Voltage to GND (Notes 3, 4)

−0.3V to +7.2V

V

−0.3V to +6.0V

Voltage on Logic Pins

-0.3V to V

0.3V, with 6.0V max

I (R1, G1, B1, R2, G2, B2)

(Note 5)

150 mA

I(V

Continuous Power Dissipation

(Note 6)

Internally Limited

Junction Temperature (T

125˚C

Storage Temperature Range

−65˚C to +150˚C

Maximum Lead Temperature

(Reflow soldering, 3 times)

(Note 7)

260˚C

ESD Rating (Notes 8, 14)

Human Body Model:

2 kV

Machine Model:

200V

V (SW, FB, WLED1-4, CLED1-2,

R1-2, G1-2, B1-2)

3.0V to 6.0V

V

2.65 to 2.9V

V

DD_IO

1.8V to V

DD1,2

Recommended Load Current

0 mA to 300 mA

Junction Temperature (T

−40˚C to +125˚C

Ambient Temperature (T

(Note 9)

−40˚C to +85˚C

Thermal Properties

Junction-to-Ambient Thermal Resistance (

θ

SLE32A Package (Note 10)

72˚C/W

Limits in standard typeface are for T

(−40˚C

≤ T

A

≤ +85˚C). Unless otherwise noted, specifications apply to the LP3933 Functional Block Diagram (pg. 5) with: V

DD1

=V

Symbol

Parameter

Condition

Min

Typ

Max

Units

I

DD

Standby Supply Current

(V

NSTBY = L (register)

SCK, SS, SI, NRST = H

1

5

µA

No-Load Supply Current

(V

NSTBY = H (reg.)

EN_BOOST = L (reg.)

SCK, SS, SI, NRST = H

170

300

µA

Full Load Supply Current

(V

NSTBY = H (reg.)

EN_BOOST = H (reg.)

SCK, SS, SI, NRST = H

All Outputs Active

1mA

I

DD_IO

V

NSTBY = L (register)

SCK, SS, SI, NRST = H

1

5

µA

V

1 MHz Clock Frequency

C

20

µA

V

REF

Reference Voltage (Note 13)

I(V

≤ 1 nA,

Test Purposes Only

1.205

−2

1.23

1.255

+2

V

%

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of

the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the

Electrical Characteristics tables.

Note 2: All voltages are with respect to the potential at the GND pins (GND1-4, GND_BOOST, GND_WLED, GND_RGB).

Note 3: Battery/Charger voltage should be above 6V no more than 10% of the operational lifetime.

(ON) at all conditions, National Semiconductor does not guarantee any parameters or reliability for this device.

Note 5: The total load current of the boost converter should be limited to 300 mA.

140˚C (typ.).

Note 7: For detailed soldering specifications and information, please refer to National Semiconductor Application Note 1125: Laminate CSP/FBGA.

Note 8: The Human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor into each pin. The machine model is a 200 pF capacitor discharged

directly into each pin. MIL-STD-883 3015.7

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