3

HV310

Sym

Parameter

Min

Typ Max Units Conditions

V

SENSE

Current limit threshold voltage

40

50

60

mV

V

V

GATE

Maximum GATE drive voltage

9.0

10

11

V

V

I

GATEUP

GATE drive pull-up current

500

-

-

µA

V

I

GATEDOWN

GATE drive pull-down current

40

-

-

mA

V

3

)

I

RAMP

Ramp pin output current

-

10

-

µA

V

t

POR

2.0

-

-

ms

---

t

RISE

Time from GATE turn on to V

400

-

-

µs

---

t

LIMIT

Duration of current limit mode

-

-

5.0

ms

---

t

PWRGD

Time from current limit to PWRGD

-

5.0

-

ms

---

V

RAMP

-

3.6

-

V

---

V

PWRGD

Power good pin breakdown voltage

90

-

-

V

---

Power good pin output low voltage

-

0.5

0.8

V

I

Dynamic Characteristics

t

GATEHLOV

OV delay

-

-

500

ns

---

t

GATEHLUV

UV delay

-

-

500

ns

---

Notes

This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.

This voltage depends on the characteristics of the external N-Channel MOSFET. V

IRF530 is a registered trademark of International Rectifier.

1.

2.

3.

Waveforms

Drain

50V/div

V

IN

50V/div

GATE

5.0V/div

I

INRUSH

500mA/div

5.0ms/div

PWRGD Logic

Device

Condition

PWRGD

HV310

Not Ready

1

Hi Z

Ready

0

V

EE