M25P16 datasheet(13/39 Pages) STMICROELECTRONICS

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M25P16

INSTRUCTIONS

All instructions, addresses and data are shifted in

and out of the device, most significant bit first.

Serial Data Input (D) is sampled on the first rising

edge of Serial Clock (C) after Chip Select (S) is

driven Low. Then, the one-byte instruction code

must be shifted in to the device, most significant bit

first, on Serial Data Input (D), each bit being

latched on the rising edges of Serial Clock (C).

The instruction set is listed in Table 4..

Every instruction sequence starts with a one-byte

instruction code. Depending on the instruction,

this might be followed by address bytes, or by data

bytes, or by both or none.

In the case of a Read Data Bytes (READ), Read

Data Bytes at Higher Speed (Fast_Read), Read

Status

(RDSR),

Read

Identification

(RDID) or Release from Deep Power-down, and

Read Electronic Signature (RES) instruction, the

shifted-in instruction sequence is followed by a

data-out sequence. Chip Select (S) can be driven

High after any bit of the data-out sequence is be-

ing shifted out.

In the case of a Page Program (PP), Sector Erase

(SE), Bulk Erase (BE), Write Status Register

(WRSR), Write Enable (WREN), Write Disable

(WRDI) or Deep Power-down (DP) instruction,

Chip Select (S) must be driven High exactly at a

byte boundary, otherwise the instruction is reject-

ed, and is not executed. That is, Chip Select (S)

must driven High when the number of clock pulses

after Chip Select (S) being driven Low is an exact

multiple of eight.

All attempts to access the memory array during a

Write Status Register cycle, Program cycle or

Erase cycle are ignored, and the internal Write

Status Register cycle, Program cycle or Erase cy-

cle continues unaffected.

Table 4. Instruction Set

Instruction

Description

One-byte Instruction Code

Address

Bytes

Dummy

Bytes

Data

Bytes

WREN

Write Enable

0000 0110

06h

WRDI

Write Disable

0000 0100

04h

RDID

Read Identification

1001 1111

9Fh

1 to 3

RDSR

Read Status Register

0000 0101

05h

1 to

∞

WRSR

Write Status Register

0000 0001

01h

READ

Read Data Bytes

0000 0011

03h

1 to

∞

FAST_READ

Read Data Bytes at Higher Speed

0000 1011

0Bh

1 to

∞

Page Program

0000 0010

02h

1 to 256

Sector Erase

1101 1000

D8h

Bulk Erase

1100 0111

C7h

Deep Power-down

1011 1001

B9h

RES

Release from Deep Power-down,

and Read Electronic Signature

1010 1011

ABh

1 to

∞

Release from Deep Power-down

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