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TLE6280GP 数据表(PDF) 13 Page - Infineon Technologies AG

部件名 TLE6280GP
功能描述  3-Phase Bridge Driver IC
PDF  25 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLE6280GP 数据表(HTML) 13 Page - Infineon Technologies AG

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Datasheet TLE6280GP
13
2007-07-19
Electrical Characteristics (continued)
Parameter and Conditions
Symbol
Values
Unit
at Tj = –40 … +150 °C, unless otherwise specified
and supply voltage range VS = 8 ... 20V; fPWM = 20kHz
min
typ
max
Dynamic characteristics (continued)
Disable propagation time
tP(DIS)
--
350
700
ns
Wake up time after enabling the device
tWU
10
µs
Input propagation time (low on)
tP(ILN)
--
220
500
ns
Input propagation time (low off)
tP(ILF)
--
180
500
ns
Input propagation time (high on)
tP(IHN)
--
250
500
ns
Input propagation time (high off)
tP(IHF)
--
185
500
ns
Input propagation time difference
(all channels turn on)
tPD(an)
20
55
70
ns
Input propagation time difference
(all channels turn off)
tPD(af)
--
11
50
ns
Input propagation time difference
(one channel; high off – low on)
tPD(1hfln)
--
60
150
ns
Input propagation time difference
(one channel; low off – high on)
tPD(1lfhn)
--
80
150
ns
Input propagation time difference
(all channels; high off – low on)
tPD(ahfln)
--
60
150
ns
Input propagation time difference
(all channels; low off – high on)
tPD(alfhn)
--
80
150
ns
DC-Resistance between CH and Bxx pin
ICH-Bxx = 50mA; VVS = VBxx = GND = 0V
@ TJ = -40°C
@ TJ = +25°C
@ TJ = +150°C
RCH-Bxx
--
3.3
4.2
6.0
6.3
7.3
8.3
Ω
Boostrap diode forward voltage ICH-Bxx = 50mA
@ TJ = -40°C
@ TJ = +25°C
@ TJ = +150°C
VBSD
--
0.84
0.73
0.52
1.2
1.0
0.76
V



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