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TLE6280GP 数据表(PDF) 20 Page - Infineon Technologies AG |
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TLE6280GP 数据表(HTML) 20 Page - Infineon Technologies AG |
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20 / 25 page ![]() Datasheet TLE6280GP 20 2007-07-19 Typ. Boostrap voltage vs. Duty Cycle Conditions: Mosfet: 6x SPB80N04S2-04; fPWM=20kHz, Vs=9V Parameter: Charge pump capacitor CCP / Bootstrap capacitor CBX Remark: The reachable duty cycle depends on the used PWM patterns. To achieve an even higher duty cycle, run it for some periods and reduce the duty cycle only for 1 period down to 90% to recharge the bootstrap capacitors. Fig. 14: Typ. bootstrap voltage V(BHx)-V(SHx); duty cycle of 1 half-bridge = 0%; duty cycle of the other 2 halfbridges variable Fig. 13: Typ. bootstrap voltage V(BHx)-V(SHx); duty cycle of 1 half-bridge = 50%; duty cycle of the other 2 halfbridges variable 0 2 4 6 8 10 12 14 0 10203040506070 8090 100 Duty Cycle [%] 1.5µF / 220nF 3µF / 440nF 4.5µF / 660nF 0 2 4 6 8 10 12 14 0 10203040506070 8090 100 Duty Cycle [%] 1.5µF / 220nF 3µF / 440nF 4.5µF / 660nF |
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