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TLE6280GP 数据表(PDF) 19 Page - Infineon Technologies AG |
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TLE6280GP 数据表(HTML) 19 Page - Infineon Technologies AG |
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19 / 25 page ![]() Datasheet TLE6280GP 19 2007-07-19 Typ. undervoltage shut down level Typ. Current consumption of output stage Conditions: Vs=12V; measured with V(BHx=12V) and potentiometer between SHx and GND Parameter: MFP voltage / TJunction Remark: The leakage current of the driver output stage is taken from the bootstrap capacitors CBX. When an external high-side Mosfet is switched on, it is impossible to replace this current. The capacitor will be discharged as long as this Mosfet stays on. The time until this output stage reaches the undervoltage shut-down can be determined by the size of the capacitor, the initial capacitor voltage, the leakage current taken out of this capacitor and the undervoltage lock-out level. 5 5,5 6 6,5 7 7,5 -40 -20 0 204060 80 100 120 140 Temperature [°C] Fig. 11: Typ. undervoltage shut down (Voltage of bootstrap capacitors) 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 56789 10 11 V(Bxx)-V(Sxx) [V] 2V 150°C 4V 150°C 5V 150°C 2V 25°C 4V 25°C 5V 25°C 2V -40°C 4V -40°C 5V -40°C Fig. 12: Leakage current of driver output stages measured as current out of SH Pin to GND |
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