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TLE6280GP 数据表(PDF) 19 Page - Infineon Technologies AG

部件名 TLE6280GP
功能描述  3-Phase Bridge Driver IC
PDF  25 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLE6280GP 数据表(HTML) 19 Page - Infineon Technologies AG

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Datasheet TLE6280GP
19
2007-07-19
Typ. undervoltage shut down level
Typ. Current consumption of output stage
Conditions:
Vs=12V; measured with V(BHx=12V) and potentiometer between SHx and GND
Parameter:
MFP voltage / TJunction
Remark:
The leakage current of the driver output stage is taken from the bootstrap capacitors CBX. When an external
high-side Mosfet is switched on, it is impossible to replace this current. The capacitor will be discharged as long
as this Mosfet stays on. The time until this output stage reaches the undervoltage shut-down can be determined
by the size of the capacitor, the initial capacitor voltage, the leakage current taken out of this capacitor and the
undervoltage lock-out level.
5
5,5
6
6,5
7
7,5
-40
-20
0
204060
80
100
120
140
Temperature [°C]
Fig. 11: Typ. undervoltage shut down (Voltage of
bootstrap capacitors)
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
56789
10
11
V(Bxx)-V(Sxx) [V]
2V 150°C
4V 150°C
5V 150°C
2V 25°C
4V 25°C
5V 25°C
2V -40°C
4V -40°C
5V -40°C
Fig. 12: Leakage current of driver output stages measured
as current out of SH Pin to GND



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