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PI2007 数据表(PDF) 13 Page - Vicor Corporation

部件名 PI2007
功能描述  Universal High Side Active ORing Controller IC
PDF  19 Pages
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制造商  VICOR [Vicor Corporation]
网页  http://www.vicorpower.com
标志 VICOR - Vicor Corporation

PI2007 数据表(HTML) 13 Page - Vicor Corporation

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Picor Corporation • picorpower.com
PI2007
Rev 1.3
Page 13 of 19
Typical application Example 1:
Requirement:
Redundant Bus Voltage = 12V (±10%, 10.8V to
13.2V)
Load Current = 15A (assume through each redundant
path)
Maximum Ambient Temperature = 75°C
Solution:
A single PI2007 with a suitable external MOSFET for
each redundant 12V power source should be used,
configured as shown in the circuit schematic in Figure
16.
Select a suitable N-Channel MOSFET:
Most
industry standard MOSFETs have a Vgs rating of +/-
12V or higher. Select an N-Channel MOSFET with a
low RDS(on) which is capable of supporting the full load
current with some margin, so a MOSFET capable of
at least 18A in steady state is reasonable.
An
exemplary MOSFET having these characteristic is the
FDS6162N7 from Fairchild.
From FDS6162N7 datasheet:
N-Channel MOSFET
VDS= 20V
ID = 23A continuous drain current
ID(Pulse) = 60A Pulsed drain current
VGS(MAX)=
 12V
RθJA= 40°C/W when mounted on a 1in
2 PCB
pad of 2 oz copper
RDS(on)=2.9mΩ typical and 3.5mΩ maximum at
ID=23A, VGS≥4.5V, TJ=25°C
Reverse current threshold is:
A
m
mV
on
Rds
reverse
Vth
reverse
Is
07
.
2
9
.
2
6
)
(
.
.
Power dissipation:
RDS(on) is 3.5mΩ maximum at 25°C & 4.5Vgs and will
increase as the temperature increases. Add 25°C to
maximum ambient temperature to compensate for the
temperature rise due to power dissipation. At 100°C
(75°C + 25°C) RDS(on) will increase by 28%.
m
m
R
on
DS
48
.
4
28
.
1
5
.
3
)
(
maximum at 100°C
)
(
2
on
DS
JA
R
Is
Rth
Trise
Maximum Junction temperature
Trise
T
T
A
J
max
C
m
A
W
C
C
T
J
115
48
.
4
)
15
(
40
75
2
max
Recalculate
based
on
increased
Junction
temperature, 115°C.
At 115°C RDS(on) will increase by 32%.
m
m
R
on
DS
62
.
4
32
.
1
5
.
3
)
(
C
m
A
W
C
C
T
J
5
.
116
62
.
4
)
15
(
40
75
2
max
VC Bias: Vin maximum input is 13.2V, this is higher
than the 11V VC Clamp Voltage (VVC-SGND) minimum.
Use the high side PI2007 internal resistor between VR
pin and VC pin will fit for this application.
Since the MOSFET requires only 4.5V for full
enhancement
then
the
PI2007
internal
resistor
between VR pin and VC pin will fit for this application.
Connect VR to Vin at the source of the MOSFET and
connect a 1
μF ceramic capacitor between VC pin and
SGND pin.
Fault Indication:
Connect FT pin to the logic input and to the logic
power supply via a 10KΩ resistor.
Figure 16: PI2007 in 12V bus high side Active ORing
configuration



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