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PI2007 数据表(PDF) 4 Page - Vicor Corporation |
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PI2007 数据表(HTML) 4 Page - Vicor Corporation |
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4 / 19 page ![]() Picor Corporation • picorpower.com PI2007 Rev 1.3 Page 4 of 19 Electrical Specifications (Continued) Unless otherwise specified: -40 C < T J < 125C, VC =10.5V, VR open, CVc = 1uF, CGATE_PGND = 1nF, SGND=PGND=0V Parameter Symbol Min Typ Max Units Conditions DIFFERENTIAL AMPLIFIER AND COMPARATORS (Continued) Gate Enable Threshold VRVS-EN +1 +6 +11 mV VSN = 10.5V @ 25°C Reverse Comparator Threshold VRVS-TH -11 -6 -2 mV VSN = 10.5V @ 25°C Reverse Comparator Hysteresis VRVS-HY 10 12 14 mV VSN = 10.5V @ 25°C Reverse Fault to Gate Turn-off Response Time tRVS 80 150 ns VSP-SN = +50mV to -50mV step to 90% of VG max Forward Comparator Threshold VFWD-TH 250 275 300 mV VSN = 10.5V @ 25°C Forward Comparator Hysteresis VFWD-HY 15 25 35 mV VSN = 10.5V @ 25°C GATE DRIVER Gate Source Current IG-SC -20 -15 μA VG=VG-Hi –1V, IVC=3mA Pull Down Peak Current to PGND(1) IG-PGND 1.5 4.0 A Pull-down Gate Resistance to PGND(1) RG-PGND 0.3 VG-PGND = 1.5V @ 25C AC Gate Pull-down Voltage to PGND(1) VG-PGND 0.2 V DC Gate Pull-down Voltage VG-SGND 0.8 1.2 V IG=100mA, in reverse fault Gate Drive Voltage to VC VG-Hi 7.0 8.0 11 V IG =-20μA, IVC=3mA 8.0 9.0 11 V IG =-2μA, IVC=3mA Gate Fall Time tG-F 10 25 ns 90% to 10% of VG max. Gate Voltage VG-UVLO 0.7 1 V IG =10μA, SP= SN=open VC = 4.5V 0.7 1 V IG =10μA, SP=0V; VC=0V 5.5V ≤ SN ≤ 80V GATE DRIVER (VR pin connected to Vin, VC pin to bypass capacitor Figure 1) Gate Drive Voltage to VR VG-Hi 4.5 7.0 9.5 V IG =-20μA, 10V VR 14V 5.0 8.0 9.5 V IG =-2μA, 10V VR 14V Fault Status: FT Fault Output Low Voltage FT V 0.2 0.5 V IFT =1.5mA, VC > 4.5V Fault Output High Source Current IFT -1 μA VFT=14V, VSP-SN > +6mV Fault Delay time TFT-DLY 4 8 16 μs VSP-SN = ± 50mV step to 90% of VGST max Note 1: These parameters are not production tested but are guaranteed by design, characterization, and correlation with statistical process control. Note 2: Current sourced by a pin is reported with a negative sign. Note 3: Refer to the VC Bias section in the Application Information for details on the VC requirement to meet the MOSFET VGS requirement. |
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