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STM32F412RG 数据表(PDF) 111 Page - STMicroelectronics |
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STM32F412RG 数据表(HTML) 111 Page - STMicroelectronics |
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111 / 193 page  DocID028087 Rev 4 111/193 STM32F412xE/G Electrical characteristics 161 Figure 33 and Figure 34 show the main PLL output clock waveforms in center spread and down spread modes, where: F0 is fPLL_OUT nominal. Tmode is the modulation period. md is the modulation depth. Figure 33. PLL output clock waveforms in center spread mode Figure 34. PLL output clock waveforms in down spread mode 6.3.12 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 47. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode, VDD = 1.7 V - 5 - mA Write / Erase 16-bit mode, VDD = 2.1 V - 8 - Write / Erase 32-bit mode, VDD = 3.3 V - 12 - |
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