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STM32F412RG 数据表(PDF) 115 Page - STMicroelectronics |
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STM32F412RG 数据表(HTML) 115 Page - STMicroelectronics |
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115 / 193 page ![]() DocID028087 Rev 4 115/193 STM32F412xE/G Electrical characteristics 161 Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code, is running. This emission test is compliant with IEC61967-2 standard which specifies the test board and the pin loading. 6.3.14 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Table 52. EMI characteristics for LQFP144 Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/100 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP144 package, conforming to IEC 61967-2, EEMBC, ART ON, all peripheral clocks enabled, clock dithering disabled. 0.1 to 30 MHz 20 dBµV 30 to 130 MHz 28 130 MHz to 1 GHz 21 EMI Level 3.5 - Table 53. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C conforming to JESD22-A114 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C conforming to ANSI/ESD STM5.3.1, UFBGA144, UFBGA100, LQFP100, LQFP64, UFQFPN48 4500 TA = +25 °C conforming to ANSI/ESD STM5.3.1, WLCSP64 3400 TA = +25 °C conforming to ANSI/ESD STM5.3.1, LQFP144 3250 1. Guaranteed by characterization, not tested in production. |
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