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STM32F412RG 数据表(PDF) 117 Page - STMicroelectronics

部件名 STM32F412RG
功能描述  ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
PDF  193 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F412RG 数据表(HTML) 117 Page - STMicroelectronics

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STM32F412xE/G
Electrical characteristics
161
Note:
It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
6.3.16
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 56 are derived from tests
performed under the conditions summarized in Table 15. All I/Os are CMOS and TTL
compliant.
Table 55. I/O current injection susceptibility(1)
1. NA = not applicable
.
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on BOOT0 pin
–0
NA
mA
Injected current on NRST pin
–0
NA
Injected current on PB3, PB4, PB5, PB6,
PB7, PB8, PB9, PC13, PC14, PC15, PH1,
PDR_ON, PC0, PC1,PC2, PC3, PD1,
PD5, PD6, PD7, PE0, PE2, PE3, PE4,
PE5, PE6
–0
NA
Injected current on any other FT pin
–5
NA
Injected current on any other pins
–5
+5
Table 56. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
FT, TC and NRST I/O input low
level voltage
1.7 VVDD3.6 V
-
-
0.3VDD(1)
V
BOOT0 I/O input low level
voltage
1.75 VVDD 3.6 V,
-40 °CTA 105 °C
--
0.1VDD+0.1(2)
1.7 VVDD 3.6 V,
0 °CTA 105 °C
--
VIH
FT, TC and NRST I/O input high
level voltage(5)
1.7 VVDD3.6 V
0.7VDD(1)
--
V
BOOT0 I/O input high level
voltage
1.75 VVDD 3.6 V,
-40 °CTA 105 °C
0.17VDD+0.7(2)
--
1.7 VVDD 3.6 V,
0 °CTA 105 °C



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