AS4SD16M16 datasheet(1/52 Pages) MICROSS

部件名	AS4SD16M16

功能描述	LVTTL- compatible inputs and outputs

PDF	52 Pages

Scroll/Zoom	100%

制造商	MICROSS [Micross Components]

网页	http://www.micross.com

标志

1 / 52 page

SDRAM

AS4SD16M16

Rev. 2.6 04/13/15

Micross Components reserves the right to change products or specifications without notice.

1

FEATURES

• Full Military temp (-55°C to 125°C) processing available

• Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks)

• Fully synchronous; all signals registered on positive

edge of system clock

• Internal pipelined operation; column address can be

changed every clock cycle

• Internal banks for hiding row access/precharge

• Programmable burst lengths: 1, 2, 4, 8 or full page

• Auto Precharge, includes CONCURRENT AUTO

PRECHARGE and Auto Refresh Modes

• Self Refresh Mode (IT & ET)

• 64ms, 8,192-cycle refresh (IT)

• 24ms 8,192 cycle recfresh (XT)

• WRITE Recovery (t

WR = “2 CLK”)

• LVTTL- compatible inputs and outputs

• Single +3.3V ±0.3V power supply

OPTIONS

MARKING

•

Plastic Package

54-pin TSOPII (400 mil)

DG No. 901

(Pb/Sn finish or RoHS available)

•

Timing (Cycle Time)

7.5ns @ CL = 3 (PC133) or

-75

10ns @ CL = 2 (PC100)

•

Operating Temperature Ranges

-Industrial Temp (-40°C to 85° C)

IT

-Enhanced Temp (-40°C to +105°C)

ET

-Military Temp (-55°C to 125°C)

XT

*Off-center parting line

**CL = CAS (READ) latency

Package may or may not be assembled with a location notch.

PIN ASSIGNMENT

(Top View)

54-Pin TSOP

Note: “\” indicates an active low.

256 MB: 16 Meg x 16 SDRAM

Synchronous DRAM Memory

For more products and information

please visit our web site at

www.micross.com

KEY TIMING PARAMETERS

SPEED

CLOCK

SETUP

HOLD

GRADE FREQUENCY CL = 2** CL = 3**

TIME

-75

133 MHz

–

5.4ns

1.5ns

0.8ns

-75

100 MHz

6ns

–

1.5ns

0.8ns

ACCESS TIME

Configuration

4 Meg x 16 x 4 banks

Refresh Count

8K

Row Addressing

8K (A0-A12)

Bank Addressing

4 (BA0, BA1)

Column Addressing

512 (A0-A8)

16 Meg x 16

类似零件编号 - AS4SD16M16

制造商	部件名	数据表	功能描述
Austin Semiconductor	AS4SD16M16	1Mb / 51P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD16M16	2Mb / 52P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD16M16DG-75	1Mb / 51P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD16M16DG-75/IT	1Mb / 51P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD16M16DG-75/IT	2Mb / 52P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory

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