SST25WF080B datasheet(18/39 Pages) MICROCHIP

18 / 39 page

SST25WF080B

DS20005164C-page 18

 2014 Microchip Technology Inc.

5.13

Power-Down

The Deep Power-Down (DPD) instruction puts the

device in the lowest power consumption mode – the

Deep Power-Down mode. This instruction is ignored if

the device is busy with an internal write operation.

While the device is in DPD mode, all instructions are

ignored except for the Release Deep Power-Down

instruction or Read ID.

To initiate deep power-down, input the Deep Power-

Down instruction (B9H) while driving CE# low. CE#

must be driven high before executing the DPD instruc-

tion. After driving CE# high, it requires a delay of TDPD

before the standby current ISB is reduced to the deep

power-down current IDPD. See Figure 5-13 for the DPD

instruction sequence.

Exit the power-down state using the Release from

Deep Power-Down or Read ID instruction. CE# must

be driven low before sending the Release from Deep

Power-Down command cycle (ABH), and then driving

CE# high. The device will return to Standby mode and

be ready for the next instruction after TSBR. See Figure

5-14. for the Release from Deep Power-Down

sequence.

FIGURE 5-13:

DEEP POWER-DOWN SEQUENCE

FIGURE 5-14:

RELEASE FROM DEEP POWER-DOWN SEQUENCE

CE#

SCK

01 2 3 4 5 6 7

HIGH IMPEDANCE

MODE 0

MODE 3

25164 F46.1

MSB

TDPD

CE#

SCK

01 2 3 4 5 6 7

HIGH IMPEDANCE

MODE 0

MODE 3

25164 F47.1

MSB

TSBR

SST25WF080B 数据表(PDF) 18 Page - Microchip Technology

SST25WF080B 数据表(HTML) 18 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39

数据表下载