STM32F413RHT6 datasheet(163/207 Pages) STMICROELECTRONICS

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STM32F413xG/H

Electrical characteristics

174

Table 91. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

1. CL = 30 pF.

2. Based on characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

3 * tHCLK - 1

3 * tHCLK + 1

tv(NOE_NE)

FSMC_NEx low to FSMC_NOE low

2 * tHCLK

2 * tHCLK + 0.5

tw(NOE)

FSMC_NOE low time

tHCLK - 1

tHCLK + 1

th(NE_NOE)

FSMC_NOE high to FSMC_NE high hold

time

tv(A_NE)

FSMC_NEx low to FSMC_A valid

0.5

tv(NADV_NE)

FSMC_NEx low to FSMC_NADV low

0.5

tw(NADV)

FSMC_NADV low time

tHCLK - 0.5

tHCLK + 1

th(AD_NADV)

FSMC_AD(address) valid hold time after

FSMC_NADV high)

tHCLK + 0.5

th(A_NOE)

Address hold time after FSMC_NOE high

tHCLK - 0.5

th(BL_NOE)

FSMC_BL time after FSMC_NOE high

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

0.5

tsu(Data_NE)

Data to FSMC_NEx high setup time

tHCLK - 2

tsu(Data_NOE) Data to FSMC_NOE high setup time

tHCLK - 2

th(Data_NE)

Data hold time after FSMC_NEx high

th(Data_NOE) Data hold time after FSMC_NOE high

Table 92. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Based on characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

8 * tHCLK - 1

8 * tHCLK + 1

tw(NOE)

FSMC_NWE low time

5 * tHCLK - 1.5 5 * tHCLK + 0.5

tsu(NWAIT_NE)

FSMC_NWAIT valid before FSMC_NEx

high

5 * tHCLK + 1.5

th(NE_NWAIT)

FSMC_NEx hold time after

FSMC_NWAIT invalid

4 * tHCLK + 1

STM32F413RHT6 数据表(PDF) 163 Page - STMicroelectronics

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