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ADA4350ARUZ-R7 数据表(PDF) 16 Page - Analog Devices

部件名 ADA4350ARUZ-R7
功能描述  FET Input Analog Front End with ADC Driver
PDF  38 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4350ARUZ-R7 数据表(HTML) 16 Page - Analog Devices

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Data Sheet
ADA4350
Rev. B | Page 15 of 37
ABSOLUTE MAXIMUM RATINGS
Table 10.
Parameter
Rating
Analog Supply Voltage
14 V
Digital Supply Voltage
5.5 V
Power Dissipation
See Figure 4
Common-Mode Input Voltage
±Vs ± 0.3V
Differential Input Voltage
±0.7 V
Input Current (IN-N, IN-P, VIN1, RF1, and REF)
20 mA
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst case conditions, that is, θJA is
specified for a device soldered in a circuit board for surface-
mount packages. Table 11 lists the θJA for the ADA4350.
Table 11. Thermal Resistance
Package Type
θJA
Unit
28-Lead TSSOP
72.4
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the ADA4350 is limited
by the associated rise in junction temperature (TJ) on the die. At
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the ADA4350. Exceeding a junction temperature of 175°C for
an extended period can result in changes in silicon devices,
potentially causing degradation or loss of functionality.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the die
due to the ADA4350 output load drive.
The quiescent power dissipation is the voltage between the supply
pins (±VS) multiplied by the quiescent current (IS).
PD = Quiescent Power + (Total Drive Power − Load Power)
(
)
L
OUT
L
OUT
S
S
S
D
R
V
R
V
V
I
V
P
2
2


×
±
+
×
±
=
Consider rms output voltages. If RL is referenced to −VS, as in
single-supply operation, the total drive power is +VS × IOUT. If
the rms signal levels are indeterminate, consider the worst case,
when VOUT = +VS/4 for RL to midsupply for dual supplies and
VOUT = +VS/2 for single supply.
(
) (
)
L
OUT
S
S
D
R
V
I
V
P
2
+
×
+
=
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
and exposed pad from metal traces, through holes, ground, and
power planes reduces θJA.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a JEDEC standard
4-layer board. θJA values are approximations.
0
0.5
1.0
1.5
2.0
2.5
3.0
–55 –45 –35 –25 –15 –5
5
15
25
35
45
55
65
75
85
AMBIENT TEMPERAURE (°C)
28-LEAD TSSOP
TJ = 150°C
Figure 4. Maximum Power Dissipation vs. Ambient Temperature for a
4-Layer Board
ESD CAUTION



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