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ADA4530-1ARZ-R7 数据表(PDF) 29 Page - Analog Devices |
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ADA4530-1ARZ-R7 数据表(HTML) 29 Page - Analog Devices |
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29 / 51 page ![]() ADA4530-1 Data Sheet Rev. A | Page 28 of 50 THEORY OF OPERATION The ADA4530-1 is an operational amplifier specifically designed to interface with the extremely high impedance sensors used in electrometer applications. A MOSFET input stage eliminates the gate leakage currents associated with legacy junction gate field effect transistor (JFET) electrometers. The ADA4530-1 achieves extremely low input bias currents while simultaneously providing robust protection against ESD damage. A unique ESD diode structure provides protection while also allowing the diodes to be guarded to minimize leakage currents to the input pins. The ADA4530-1 integrates the precision buffer used to guard internal ESD diode leakage paths. The output of this guard buffer is also connected to external pins to allow the user to guard external components against leakage currents. The input bias current is determined by the accuracy of the guard voltage applied across the ESD diodes. The offset voltages of the amplifier and guard buffer set the accuracy of the guard voltage and, therefore, the input bias current. The ADA4530-1 uses Analog Devices, Inc., DigiTrim™ technology to achieve its superior performance. DigiTrim is used to trim the offset voltage of the amplifier and guard buffer to reject changes in the common-mode voltage, power supply voltage, and temperature. This technique significantly improves VOS, CMRR, PSRR, and TCVOS specifications. Figure 99 shows the simplified schematic of the ADA4530-1. The amplifier uses a three-stage architecture with a fully differential input stage to achieve excellent dc performance specifications. ESD STRUCTURE The input ESD structure consists of Diode D1 to Diode D6. The noninverting input is coupled to the guard pins (GRD) by the D1 and D2 antiparallel diodes. The inverting input is coupled to the guard pins by the D3 and D4 antiparallel diodes. The guard pins are connected to the power supplies through Diode D5 and Diode D6. During ESD events, the transient current flows from the input pins through one of the antiparallel diodes and harmlessly into the supplies through one of the power supply diodes. During normal operation, the guard buffer (BUF1) forces the voltage across the antiparallel diodes to 0 V. Resistor R1 shields the guard buffer from potentially large capacitances connected to the guard pins. Its value is nominally 1 kΩ. INPUT STAGE The input stage comprises a PMOS differential pair (M1, M2), folded cascode transistors (M5 to M12), and current source I1. The ADA4530-1 achieves its high performance specifications by using low voltage MOS devices for its differential inputs. These low voltage MOS devices offer better 1/f noise and bandwidth per unit current compared to high voltage devices. The input stage is isolated from the high system voltages with proprietary protection circuitry. This regulation circuitry protects the input devices from the high supply voltages in which the amplifier can operate. The proprietary high voltage protection circuitry in the ADA4530-1 operates in such a way that it minimizes the common-mode voltage changes seen by the amplifier input stage for most of the input common-mode range. This circuitry results in excellent disturbance rejection when operating in this preferred input common-mode range. The performance benefits of operating within this preferred range are shown in the VOS vs. VCM graphs (see Figure 16 to Figure 18), the small signal CMRR vs. VCM graph (see Figure 21), and the small signal PSRR vs. VCM graph (see Figure 54). These input devices are protected from large differential input voltages by the antiparallel ESD diodes (D1 to D4). The diodes can conduct significant current when the differential voltage exceeds 700 mV. The user must ensure that the current flowing into the input pins is limited to the absolute maximum of 10 mA. V– V+ +IN –IN GRD GRD D1 D5 D6 D2 D3 D4 M1 M2 M11 M7 M12 M10 M8 M6 M5 M9 M15 M16 M14 M13 M21 M19 M20 M18 M17 M22 R1 BUF1 HIGH VOLTAGE PROTECTION HIGH VOLTAGE PROTECTION I1 I2 M3 M4 V1 C1 C2 C3 OUT Figure 99. Simplified Schematic |
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