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ADA4530-1ARZ-R7 数据表(PDF) 29 Page - Analog Devices

部件名 ADA4530-1ARZ-R7
功能描述  Femtoampere Input Bias Current Electrometer Amplifier
PDF  51 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4530-1ARZ-R7 数据表(HTML) 29 Page - Analog Devices

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ADA4530-1
Data Sheet
Rev. A | Page 28 of 50
THEORY OF OPERATION
The ADA4530-1 is an operational amplifier specifically
designed to interface with the extremely high impedance
sensors used in electrometer applications.
A MOSFET input stage eliminates the gate leakage currents
associated with legacy junction gate field effect transistor
(JFET) electrometers. The ADA4530-1 achieves extremely low
input bias currents while simultaneously providing robust
protection against ESD damage. A unique ESD diode structure
provides protection while also allowing the diodes to be
guarded to minimize leakage currents to the input pins. The
ADA4530-1 integrates the precision buffer used to guard
internal ESD diode leakage paths. The output of this guard
buffer is also connected to external pins to allow the user to
guard external components against leakage currents.
The input bias current is determined by the accuracy of the
guard voltage applied across the ESD diodes. The offset voltages
of the amplifier and guard buffer set the accuracy of the guard
voltage and, therefore, the input bias current.
The ADA4530-1 uses Analog Devices, Inc., DigiTrim™
technology to achieve its superior performance.
DigiTrim is used to trim the offset voltage of the amplifier and
guard buffer to reject changes in the common-mode voltage,
power supply voltage, and temperature. This technique
significantly improves VOS, CMRR, PSRR, and TCVOS
specifications.
Figure 99 shows the simplified schematic of the ADA4530-1.
The amplifier uses a three-stage architecture with a fully
differential input stage to achieve excellent dc performance
specifications.
ESD STRUCTURE
The input ESD structure consists of Diode D1 to Diode D6.
The noninverting input is coupled to the guard pins (GRD)
by the D1 and D2 antiparallel diodes. The inverting input is
coupled to the guard pins by the D3 and D4 antiparallel diodes.
The guard pins are connected to the power supplies through
Diode D5 and Diode D6. During ESD events, the transient
current flows from the input pins through one of the antiparallel
diodes and harmlessly into the supplies through one of the power
supply diodes. During normal operation, the guard buffer (BUF1)
forces the voltage across the antiparallel diodes to 0 V. Resistor R1
shields the guard buffer from potentially large capacitances
connected to the guard pins. Its value is nominally 1 kΩ.
INPUT STAGE
The input stage comprises a PMOS differential pair (M1, M2),
folded cascode transistors (M5 to M12), and current source I1.
The ADA4530-1 achieves its high performance specifications by
using low voltage MOS devices for its differential inputs. These
low voltage MOS devices offer better 1/f noise and bandwidth
per unit current compared to high voltage devices. The input
stage is isolated from the high system voltages with proprietary
protection circuitry. This regulation circuitry protects the input
devices from the high supply voltages in which the amplifier
can operate.
The proprietary high voltage protection circuitry in the
ADA4530-1 operates in such a way that it minimizes the
common-mode voltage changes seen by the amplifier input
stage for most of the input common-mode range. This circuitry
results in excellent disturbance rejection when operating in this
preferred input common-mode range. The performance
benefits of operating within this preferred range are shown in
the VOS vs. VCM graphs (see Figure 16 to Figure 18), the small
signal CMRR vs. VCM graph (see Figure 21), and the small signal
PSRR vs. VCM graph (see Figure 54).
These input devices are protected from large differential input
voltages by the antiparallel ESD diodes (D1 to D4). The diodes
can conduct significant current when the differential voltage
exceeds 700 mV. The user must ensure that the current flowing
into the input pins is limited to the absolute maximum of 10 mA.
V–
V+
+IN
–IN
GRD
GRD
D1
D5
D6
D2
D3
D4
M1
M2
M11
M7
M12
M10
M8
M6
M5
M9
M15
M16
M14
M13
M21
M19
M20
M18
M17
M22
R1
BUF1
HIGH VOLTAGE PROTECTION
HIGH VOLTAGE PROTECTION
I1
I2
M3 M4
V1
C1
C2
C3
OUT
Figure 99. Simplified Schematic



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