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ADA4530-1ARZ-R7 数据表(PDF) 49 Page - Analog Devices

部件名 ADA4530-1ARZ-R7
功能描述  Femtoampere Input Bias Current Electrometer Amplifier
PDF  51 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4530-1ARZ-R7 数据表(HTML) 49 Page - Analog Devices

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ADA4530-1
Data Sheet
Rev. A | Page 48 of 50
Table 14. Low Frequency Noise Budget
Error Source
25°C
45°C
60°C
VNRF
12.8 μV/√Hz
13.2 μV/√Hz
13.5 μV/√Hz
RSHUNT
5 GΩ
1.25 GΩ
442 MΩ
VNRSHUNT
9 μV/√Hz
4.7 μV/√Hz
2.8 μV/√Hz
RF/RSHUNT
2
8
22
VNRSHUNT_RTO
18 μV/√Hz
37 μV/√Hz
61 μV/√Hz
IN−
0.07 fA/√Hz
0.15 fA/√Hz
0.24 fA/√Hz
IN−_RTO
700 nV/√Hz
1.5 μV/√Hz
2.4 μV/√Hz
Low Frequency
NSD Total
22 μV/√Hz
39 μV/√Hz
62 μV/√Hz
Low Frequency
RMS Total
194 μV rms
345 μV rms
549 μV rms
The sole high frequency noise contributor is the amplifier
voltage noise, which is multiplied by the high frequency noise
gain and band limited only by the amplifier gain. The −3 dB
bandwidth of the amplifier is 17 kHz (refer to Equation 3,
where f3 = fUGC ÷ NG2 = 2 MHz ÷ 118). The equivalent noise
bandwidth is 27 kHz. The high bandwidth is the reason the
high frequency noise is significant even though the noise
spectral density is much lower than the low frequency noise.
Table 15. High Frequency Noise Budget
Error Source
25°C
45°C
60°C
VN
14 nV/√Hz
14.5 nV/√Hz
14.8 nV/√Hz
High Frequency
Noise Gain
118
118
118
VN_RTO
1.6 μV/√Hz
1.7 μV/√Hz
1.7 μV/√Hz
High Frequency
RMS Total
271 μV rms
281 μV rms
286 μV rms
At low temperatures, the amplifier voltage noise is more signifi-
cant than any other noise source. This is important because the
majority of this noise occurs outside the useful bandwidth of
the circuit. For this reason, it is prudent to add a low-pass filter
to the output of a photodiode TIA circuit. This filter can be active
or passive depending on the needs of the system. A simple RC
filter with a −3 dB cutoff of 500 Hz has an insignificant impact
on the frequency response of the signal path, but it lowers the
integrated noise from 271 μV rms to 45 μV rms (a 6× reduction).
The NSD was measured for this circuit with (blue curve) and
without (red curve) the 300 fF CF capacitor (see Figure 131). At
low frequencies, the NSD is approximately equal to the noise
from the feedback resistor alone (12.8 μV/√Hz). The value of
the low frequency NSD shows that the shunt resistance is much
larger than the specified minimum (which is expected). As
frequency increases, the resistor noise rolls off at the signal
bandwidth (50 Hz). The NSD then plateaus at the amplifier
voltage noise level until the bandwidth limitations of the
amplifier roll off the NSD toward zero.
110
10
100
100
1000
0.1
100k
10k
1k
100
10
1
FREQUENCY (Hz)
VSY = 10V
VCM = VSY/2
TA = 25°C
NSD, CF = 0fF
NSD, CF = 300fF
RMS, CF = 0fF
RMS, CF = 300fF
Figure 131. RTO Noise Spectral Density (25°C)
The dashed curves show the integration of the NSD across the
frequency spectrum. These are useful to calculate the rms noise
over a variety of bandwidths. For example, the rms noise over
the entire 100 kHz measurement bandwidth is 400 μV rms,
which is approximately the same as the calculated total noise of
333 μV rms. If a postfilter is added with a noise bandwidth of
1 kHz, Figure 131 shows that the integrated noise is 200 μV rms
(a 2× improvement).
The uncompensated circuit (red curves) shows considerably
worse noise performance. The frequency peaking due to the
marginal loop stability multiplies the noise as well as the signal.
In addition, the high frequency noise gain is larger, which adds
much more noise outside the signal bandwidth. Both of these
effects together generate 1.2 mV rms of total noise. Even if the
transient and frequency response of an undercompensated TIA
are acceptable, the large noise penalty may not be.
Lastly, the NSD was measured for this circuit at 60°C (see
Figure 132). As expected, the low frequency noise increased as a
result of the photodiode shunt resistance. The average low
frequency NSD is 22 μV/√Hz. Removing the contribution of RF
gives an RTO contribution of 17 μV/√Hz, which is equivalent to
an RTI current noise of 1.7 fA/√Hz. RSHUNT must be approxi-
mately 6.5 GΩ at 60°C to generate this noise.
110
10
100
100
1000
0.1
100k
10k
1k
100
10
1
FREQUENCY (Hz)
VSY = 10V
VCM = VSY/2
TA = 60°C
NSD, CF = 300fF
RMS, CF = 300fF
Figure 132. RTO Noise Spectral Density (60°C)



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