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FT231XS-R 数据表(PDF) 16 Page - Future Technology Devices International Ltd.

部件名 FT231XS-R
功能描述  Future Technology Devices International Ltd.
PDF  44 Pages
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制造商  FTDI [Future Technology Devices International Ltd.]
网页  http://www.ftdichip.com
标志 FTDI - Future Technology Devices International Ltd.

FT231XS-R 数据表(HTML) 16 Page - Future Technology Devices International Ltd.

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Copyright © 2013 Future Technology Devices International Limited
16
FT231X USB TO FULL HANDSHAKE UART IC
Datasheet
Version 1.2
Document No.: FT_000565 Clearance No.:
FTDI# 261
5 Devices Characteristics and Ratings
5.1 Absolute Maximum Ratings
The absolute maximum ratings for the FT231X devices are as follows. These are in accordance with the
Absolute Maximum Rating System (IEC 60134). Exceeding these may cause permanent damage to the
device.
Parameter
Value
Unit
Conditions
Storage Temperature
-65°C to 150°C
Degrees C
Floor Life (Out of Bag) At Factory Ambient
(30°C / 60% Relative Humidity)
168 Hours
(IPC/JEDEC J-
STD-033A MSL
Level 3
Compliant)*
Hours
Ambient Operating Temperature (Power
Applied)
-40°C to 85°C
Degrees C
MTTF FT231XS
TBD
Hours
MTTF FT231XQ
TBD
Hours
VCC Supply Voltage
-0.3 to +5.5
V
VCCIO IO Voltage
-0.3 to +4.0
V
DC Input Voltage – USBDP and USBDM
-0.5 to +3.63
V
DC Input Voltage – High Impedance
Bi-directionals (powered from VCCIO)
-0.3 to +5.8
V
DC Output Current – Outputs
22
mA
ESD Charge Device Mode(CDM)
500
V
Class III
ESD Human Body Mode (HDM)
2000
V
Class 2
Table 5.1 Absolute Maximum Ratings
* If devices are stored out of the packaging beyond this time limit the devices should be baked before
use. The devices should be ramped up to a temperature of +125°C and baked for up to 17 hours.
5.2 ESD and Latch-up Specifications
Description
Specification
Human Body Mode (HBM)
> ± 2kV
Machine mode (MM)
> ± 200V
Charged Device Mode (CDM)
> ± 500V
Latch-up
> ± 200mA
Table 5.2 ESD and Latch-Up Specifications



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