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ADE7754 数据表(PDF) 37 Page - Analog Devices

部件名 ADE7754
功能描述  Poly-phase Multi-Function Energy Metering IC with Serial Port
PDF  44 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADE7754 数据表(HTML) 37 Page - Analog Devices

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REV. PrG 01/03
PRELIMINARY TECHNICAL DATA
ADE7754
– 37 –
Address
Default
[A5:A0]
Name
R/W*
Length
Value
Description
2Ch
AVRMS
R
24
0
Phase A Voltage channel RMS register.
2Dh
BVRMS
R
24
0
Phase B Voltage channel RMS register.
2Eh
CVRMS
R
24
0
Phase C Voltage channel RMS register.
2Fh
AIRMSOS
R/W
12
0
Phase A Current RMS offset correction register.
30h
BIRMSOS
R / W
12
0
Phase B Current RMS offset correction register.
31h
CIRMSOS
R/W
12
0
Phase C Current RMS offset correction register.
32h
AVRMSOS
R/W
12
0
Phase A Voltage RMS offset correction register.
33h
BVRMSOS
R / W
12
0
Phase B Voltage RMS offset correction register.
34h
CVRMSOS
R/W
12
0
Phase C Voltage RMS offset correction register.
35h
AAPGAIN
R / W
12
0
Phase A Active Power Gain Adjust. The Active Power accu-
mulation of the phase A can be calibrated by writing to this
register. The calibration range is ±50% of the nominal full
scale of the Active Power. The resolution of the gain is
0.0244% / LSB - see Current channel Gain Adjust
36h
BAPGAIN
R / W
12
0
Phase B Active Power Gain Adjust
37h
CAPGAIN
R / W
12
0
Phase C Active Power Gain Adjust
38h
AVGAIN
R / W
12
0
Phase A voltage RMS gain. The Apparent Power accumula-
tion of the phase A can be calibrated by writing to this
register. The calibration range is ±50% of the nominal full
scale of the Apparent Power. The resolution of the gain is
0.0244% / LSB - see Voltage RMS Gain Adjust
39h
BVGAIN
R/W
12
0
Phase B voltage RMS gain
3Ah
CVGAIN
R/W
12
0
Phase C voltage RMS gain
3Bh
Reserved
3Dh
3Eh
CHKSUM
R
8
Check sum register. The content of this register represents
the sum of all ones of the latest register read from the SPI
port.
3Fh
VERSION
R
8
1
Version of the Die
*R/W: Read/Write capability of the register.
R: Read only register.
R/W: Register that can be both read and written.



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