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STM8T141 数据表(PDF) 33 Page - STMicroelectronics |
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STM8T141 数据表(HTML) 33 Page - STMicroelectronics |
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33 / 50 page ![]() STM8T141 Electrical characteristics Doc ID 15699 Rev 7 33/50 9.5 Capacitive sensing characteristics . Table 16. General capacitive sensing characteristics(1) 1. Values guaranteed by design. Symbol Parameter Min. Typ. Max. Unit fTRANSFER Charge-transfer frequency at 125-kHz setting 90 125 160 kHz Charge-transfer frequency at 250-kHz setting 185 250 315 tSAMPLING Scanning period at 10-ms setting 7.5 10 12.5 ms Scanning period at 20-ms setting 15 20 25 tLP Low Power 4 tSAMPLING Extreme Low Power 16 tSAMPLING tELP Time before switching back to Low Power mode 540 tRFT (2) 2. See tRFT in Figure 9: Reference freeze timeout. 15 s reference freeze timeout 11 15 19 s 45 s reference freeze timeout 33 45 57 tBURST Burst detection 32 214 tTRANSFER DDC Detection debounce count 4 Counts EDDC End of detection debounce count 3 DTh (3) 3. Reference value (Ref.) described in Section 5.3.3: Debounce filter on page 16. Proximity detection threshold – 8 Counts Sensitive proximity detection threshold – 2 Touch detection threshold Ref./16 Sensitive touch detection threshold Ref./32 (4) 4. Between 3 V and 3.5 V, evolves as shown in Figure 23. Power supply rejection ratio VDDMIN < VDD < 3 V) 0.0250 Count/V Power supply rejection ratio (3.5 V < VDD < VDDMAX) 0.0005 |
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