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STM8T141 数据表(PDF) 48 Page - STMicroelectronics

部件名 STM8T141
功能描述  Single-channel capacitive sensor for touch or proximity detection with shielded sensing electrode
PDF  50 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8T141 数据表(HTML) 48 Page - STMicroelectronics

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Revision history
STM8T141
48/50
Doc ID 15699 Rev 7
13
Revision history
Table 28.
Document revision history
Date
Revision
Changes
09-Jun-2009
1
Initial release.
02-Jul-2009
2
VDD range changed to 2.9 to 5.5V. Table 12 and Table 14 updated.
Internal voltage regulator bypassed configuration removed.
IDDLP removed from Table 13.
31-Jul-2009
3
Upgraded document from Preliminary Data to full Datasheet.
Updated oscillator information in Figure 1: STM8T141 block diagram
on page 8.
Added detection threshold values in Table 16: General capacitive
sensing characteristics on page 33.
Updated values in Table 17: Response times on page 34.
05-Oct-2009
4
Updated Section 11: Ordering information.
Section 11.2: Orderable favorite device lists: added information on
option byte programming; added option list.
Added Section 12: STM8T141 development tools
24-Feb-2010
5
Lower operating supply voltage changed from 2.9 V to 2.0 V. The
following tables were impacted: Table 1: Device summary, Table 12:
Operating characteristics, Table 13: Average current consumption
without shield, Table 16: General capacitive sensing characteristics,
and Table 16: General capacitive sensing characteristics.
Introduced trademark for ProxSense (ProxSense™)
Throughout document, “sensitivity threshold or level” replaced with
“detection threshold”, “automatic recalibration” with “reference freeze
timeout”, “STH” with “DTh”, and “SO” with “SO8”.
Section 2: Block diagram: replaced ‘capacitive sensing engine’ with
‘ProxSense engine’.
Added Figure 3: UFDFPN8 pinout.
Updated Table 2: STM8T141 pin descriptions.
Renamed Section 4 as STM8T ProxSense technology
Renamed Section 4.2 as Charge transfer acquisition principle and
updated text.
Figure 5: STM8T measuring circuitry: updated.
Figure 6: Conversion period examples: updated.
Sections 4.3 renamed Section 5: STM8T processing. Section re-
organised and reworked with new figures and tables added.
Section 6: Typical application diagram: removed introductory text;
modified Figure 10, modified footnote 1, added footnote 2, added text
regarding RSHIELD resistor, define a touch or proximity detection.
Section 7: Device operation: Re-organisation of text; removed
reference related to low power modes.
Section 7.1: Option byte description: added reference to Section 12.
Table 5: Option bytes: updated factory default setting of OPT1,
recalibration timeout renamed reference freeze timeout.



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