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STM8T141 数据表(PDF) 48 Page - STMicroelectronics |
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STM8T141 数据表(HTML) 48 Page - STMicroelectronics |
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48 / 50 page ![]() Revision history STM8T141 48/50 Doc ID 15699 Rev 7 13 Revision history Table 28. Document revision history Date Revision Changes 09-Jun-2009 1 Initial release. 02-Jul-2009 2 VDD range changed to 2.9 to 5.5V. Table 12 and Table 14 updated. Internal voltage regulator bypassed configuration removed. IDDLP removed from Table 13. 31-Jul-2009 3 Upgraded document from Preliminary Data to full Datasheet. Updated oscillator information in Figure 1: STM8T141 block diagram on page 8. Added detection threshold values in Table 16: General capacitive sensing characteristics on page 33. Updated values in Table 17: Response times on page 34. 05-Oct-2009 4 Updated Section 11: Ordering information. Section 11.2: Orderable favorite device lists: added information on option byte programming; added option list. Added Section 12: STM8T141 development tools 24-Feb-2010 5 Lower operating supply voltage changed from 2.9 V to 2.0 V. The following tables were impacted: Table 1: Device summary, Table 12: Operating characteristics, Table 13: Average current consumption without shield, Table 16: General capacitive sensing characteristics, and Table 16: General capacitive sensing characteristics. Introduced trademark for ProxSense (ProxSense™) Throughout document, “sensitivity threshold or level” replaced with “detection threshold”, “automatic recalibration” with “reference freeze timeout”, “STH” with “DTh”, and “SO” with “SO8”. Section 2: Block diagram: replaced ‘capacitive sensing engine’ with ‘ProxSense engine’. Added Figure 3: UFDFPN8 pinout. Updated Table 2: STM8T141 pin descriptions. Renamed Section 4 as STM8T ProxSense technology Renamed Section 4.2 as Charge transfer acquisition principle and updated text. Figure 5: STM8T measuring circuitry: updated. Figure 6: Conversion period examples: updated. Sections 4.3 renamed Section 5: STM8T processing. Section re- organised and reworked with new figures and tables added. Section 6: Typical application diagram: removed introductory text; modified Figure 10, modified footnote 1, added footnote 2, added text regarding RSHIELD resistor, define a touch or proximity detection. Section 7: Device operation: Re-organisation of text; removed reference related to low power modes. Section 7.1: Option byte description: added reference to Section 12. Table 5: Option bytes: updated factory default setting of OPT1, recalibration timeout renamed reference freeze timeout. |
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