STGF10H60DF datasheet(8/24 Pages) STMICROELECTRONICS

8 / 24 page

Electrical characteristics

STGB10H60DF, STGF10H60DF, STGP10H60DF

8/24

DocID025111 Rev 2

Figure 8. VCE(sat) vs. junction temperature

Figure 9. VCE(sat) vs. collector current

Figure 10. Collector current vs. switching

frequency for D2PAK and TO-220

Figure 11. Collector current vs. switching

frequency for TO-220FP

VCE(sat)

1.8

1.6

1.4

1.2

-50

TJ(°C)

(V)

100

050

2.2

150

VGE= 15V

IC= 20A

IC= 10A

IC= 5A

GIPD281020131418FSR

VCE(sat)

1.6

1.4

1.2

IC(A)

(V)

1.8

610

2.2

VGE= 15V

TJ= -40°C

TJ= 25°C

TJ= 175°C

GIPD281020131424FSR

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, R =4.7

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

GIPD281020131430FSR

GIPD281020131440FSR

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, RG=4.7Ω,

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

Figure 12. Forward bias safe operating area for

D2PAK and TO-220

Figure 13. Forward bias safe operating area for

TO-220FP

0.1

VCE(V)

(A)

10 μs

100 μs

1 ms

Single pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

GIPD281020131452FSR

0.1

VCE(V)

(A)

10 μs

100 μs

1 ms

Single pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

GIPD281020131505FSR

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