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STGF10H60DF 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGF10H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
PDF  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF10H60DF 数据表(HTML) 9 Page - STMicroelectronics

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STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics
24
Figure 14. Transfer characteristics
Figure 15. Diode VF vs. forward current
IC
15
10
5
0
6
7
VGE(V)
(A)
10
20
8
9
25
TJ=175°C
30
35
TJ=-40°C
TJ=25°C
VCE=5V
GIPD281020131513FSR
VF
2.1
1.7
1.3
0.9
4
IF(A)
(V)
8
TJ= 175°C
12
16
20
TJ= 25°C
TJ= -40°C
GIPD281020131551FSR
Figure 16. Normalized VGE(th) vs junction
temperature
Figure 17. Normalized V(BR)CES vs. junction
temperature
VGE(th)
1.1
1.0
0.6
-50
TJ(°C)
(norm)
0
50
100
150
IC= 1mA
VCE= VGE
0.7
0.8
0.9
GIPD281020131600FSR
V(BR)CES
1.1
1.0
0.9
-50
TJ(°C)
(norm)
0
50
100
150
IC= 2mA
GIPD041020131502FSR
Figure 18. Capacitance variation
Figure 19. Gate charge vs. gate-emitter voltage
C
10
VCE(V)
(pF)
0.1
1
10
Cies
100
1000
Coes
Cres
GIPD281020131602FSR
VGE
8
0
Qg(nC)
(V)
020
IC= 10A
IGE= 1mA
VCC= 480V
4
40
12
60
16
GIPD281020131606FSR



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