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STGF10H60DF 数据表(PDF) 11 Page - STMicroelectronics

部件名 STGF10H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
PDF  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF10H60DF 数据表(HTML) 11 Page - STMicroelectronics

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DocID025111 Rev 2
11/24
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics
24
Figure 24. Short circuit time and current vs VGE Figure 25. Switching times vs. collector current
tsc
10
8
6
10
VGE(V)
12
(μs)
11
VCC= 360V, RG= 10
Ω
4
tSC
ISC
13
12
ISC(A)
100
50
150
200
14
14
GIPD281020131634FSR
t
IC(A)
(ns)
0
4
8
10
12
tf
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
tdoff
100
tr
tdon
16
GIPD281020131641FSR
Figure 26. Switching times vs. gate resistance
Figure 27. Reverse recovery current vs. diode
current slope
t
1
RG(Ω)
(ns)
010
20
10
30
tf
TJ= 175°C, VGE= 15V,
IC= 10A, VCC= 400V
40
100
tdon
tdoff
tr
GIPD281020131655FSR
Irm
0
di/dt(A/μs)
(A)
0
200
400
8
600
IF = 10A, Vr = 400V
800
12
=175°C
=25°C
16
4
TJ
TJ
20
GIPD281020131713FSR
Figure 28. Reverse recovery time vs. diode
current slope
Figure 29. Reverse recovery charge vs. diode
current slope
trr
0
di/dt(A/μs)
(μs)
0
200
400
80
600
IF = 10A, Vr = 400V
800
120
=175°C
=25°C
160
40
TJ
TJ
GIPD281020131720FSR
Qrr
0
di/dt(A/μs)
(nC)
0
200
400
300
600
IF = 10A, Vr = 400V
800
400
=175°C
=25°C
200
TJ
TJ
100
500
GIPD281020131724FSR



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