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STGF10H60DF 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGF10H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF10H60DF 数据表(HTML) 5 Page - STMicroelectronics

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STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics
24
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 10 A,
R
G
= 10
Ω, V
GE
= 15 V
19.5
ns
t
r
Current rise time
6.9
ns
(di/dt)on
Turn-on current slope
1170
A/μs
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 10 A,
R
G
= 10
Ω, V
GE
= 15 V
T
J
= 175 °C
20
ns
t
r
Current rise time
6.8
ns
(di/dt)on
Turn-on current slope
1176
A/μs
t
r(Voff)
Off voltage rise time
V
CE
= 400 V, I
C
= 10 A,
R
G
= 10
Ω, V
GE
= 15 V
19.6
ns
t
d(off)
Turn-off delay time
103
ns
t
f
Current fall time
73
ns
t
r(Voff)
Off voltage rise time
V
CE
= 400 V, I
C
= 10 A,
R
G
= 10
Ω, V
GE
= 15 V
T
J
= 175 °C
28
ns
t
d(off)
Turn-off delay time
104
ns
t
f
Current fall time
110
ns
t
sc
Short-circuit withstand time
V
CC
≤ 360 V, V
GE
= 15 V,
R
G
= 10
Ω
35
μs
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
V
CE
= 400 V, I
C
= 10 A,
R
G
= 10
Ω, V
GE
= 15 V
-83
-
μJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
140
-
μJ
E
ts
Total switching losses
-
223
-
μJ
Eon
(1)
Turn-on switching losses
V
CE
= 400 V, I
C
= 10 A,
R
G
= 10
Ω, V
GE
= 15 V
T
J
= 175 °C
-
148
-
μJ
E
off
(2)
Turn-off switching losses
-
214
-
μJ
E
ts
Total switching losses
-
362
-
μJ



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