STGP10H60DF datasheet(9/24 Pages) STMICROELECTRONICS

部件名	STGP10H60DF

功能描述	Trench gate field-stop IGBT, H series 600 V, 10 A high speed

PDF	24 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

9 / 24 page

DocID025111 Rev 2

9/24

STGB10H60DF, STGF10H60DF, STGP10H60DF

Electrical characteristics

Figure 14. Transfer characteristics

Figure 15. Diode VF vs. forward current

VGE(V)

(A)

TJ=175°C

TJ=-40°C

TJ=25°C

VCE=5V

GIPD281020131513FSR

2.1

1.7

1.3

0.9

IF(A)

(V)

TJ= 175°C

TJ= 25°C

TJ= -40°C

GIPD281020131551FSR

Figure 16. Normalized VGE(th) vs junction

temperature

Figure 17. Normalized V(BR)CES vs. junction

temperature

VGE(th)

1.1

1.0

0.6

-50

TJ(°C)

(norm)

100

150

IC= 1mA

VCE= VGE

0.7

0.8

0.9

GIPD281020131600FSR

V(BR)CES

1.1

1.0

0.9

-50

TJ(°C)

(norm)

100

150

IC= 2mA

GIPD041020131502FSR

Figure 18. Capacitance variation

Figure 19. Gate charge vs. gate-emitter voltage

VCE(V)

(pF)

0.1

Cies

100

1000

Coes

Cres

GIPD281020131602FSR

VGE

Qg(nC)

(V)

020

IC= 10A

IGE= 1mA

VCC= 480V

GIPD281020131606FSR

STGP10H60DF 数据表(PDF) 9 Page - STMicroelectronics

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