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STGP10H60DF 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGP10H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10H60DF 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB10H60DF, STGF10H60DF, STGP10H60DF
4/24
DocID025111 Rev 2
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 10 A
1.5
1.95
V
V
GE
= 15 V, I
C
= 10 A
T
J
= 125 °C
1.65
V
GE
= 15 V, I
C
= 10 A
T
J
= 175 °C
1.7
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA
5.0
6.0
7.0
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
25
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V
250
nA
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-1300
-
pF
C
oes
Output capacitance
-
60
-
pF
C
res
Reverse transfer
capacitance
-30
-
pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 10 A,
V
GE
= 15 V
-57
-
nC
Q
ge
Gate-emitter charge
-
8
-
nC
Q
gc
Gate-collector charge
-
27
-
nC



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