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STGP10H60DF 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGP10H60DF
功能描述  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10H60DF 数据表(HTML) 3 Page - STMicroelectronics

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DocID025111 Rev 2
3/24
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical ratings
24
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
TO-220
D²PAK
TO-220FP
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600
V
I
C
Continuous collector current at T
C
= 25 °C
20
20
(1)
1.
Limited by maximum junction temperature.
A
Continuous collector current at T
C
= 100 °C
10
10
(1)
A
I
CP
(2)
2.
Pulse width limited by maximum junction temperature.
Pulsed collector current
40
40
(1)
A
V
GE
Gate-emitter voltage
±20
V
I
F
Continuous forward current T
C
= 25 °C
20
20
(1)
A
Continuous forward current at T
C
= 100 °C
10
10
(1)
I
FP
(2)
Pulsed forward current
40
40
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
115
30
W
T
STG
Storage temperature range
- 55 to 150
°C
T
J
Operating junction temperature
- 55 to 175
Table 3. Thermal data
Symbol
Parameter
TO-220
D²PAK
TO-220FP
Unit
R
thJC
Thermal resistance junction-case IGBT
1.3
5
°C/W
R
thJC
Thermal resistance junction-case diode
2.78
6.25
°C/W
R
thJA
Thermal resistance junction-ambient
62.5
°C/W



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