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STGP10H60DF 数据表(PDF) 1 Page - STMicroelectronics |
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STGP10H60DF 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 24 page ![]() This is information on a product in full production. October 2013 DocID025111 Rev 2 1/24 STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. TO-220 D²PAK 1 2 3 TAB 1 3 TAB TO-220FP 1 2 3 C (2, TAB) E (3) G (1) Table 1. Device summary Order codes Marking Packages Packaging STGB10H60DF GB10H60DF D²PAK Tape and reel STGF10H60DF GF10H60DF TO-220FP Tube STGP10H60DF GP10H60DF TO-220 Tube www.st.com |
类似零件编号 - STGP10H60DF |
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类似说明 - STGP10H60DF |
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