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STGF30H60DF 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGF30H60DF
功能描述  600 V, 30 A high speed trench gate field-stop IGBT
PDF  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF30H60DF 数据表(HTML) 7 Page - STMicroelectronics

Back Button STGF30H60DF Datasheet HTML 3Page - STMicroelectronics STGF30H60DF Datasheet HTML 4Page - STMicroelectronics STGF30H60DF Datasheet HTML 5Page - STMicroelectronics STGF30H60DF Datasheet HTML 6Page - STMicroelectronics STGF30H60DF Datasheet HTML 7Page - STMicroelectronics STGF30H60DF Datasheet HTML 8Page - STMicroelectronics STGF30H60DF Datasheet HTML 9Page - STMicroelectronics STGF30H60DF Datasheet HTML 10Page - STMicroelectronics STGF30H60DF Datasheet HTML 11Page - STMicroelectronics Next Button
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DocID022363 Rev 3
7/24
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = 25°C)
Figure 3. Output characteristics (TJ = 175°C)
Figure 4. Transfer characteristics
Figure 5. Normalized VGE(th) vs. junction
temperature
Figure 6. Power dissipation vs. case
temperature for D²PAK, TO-220 and TO-247
Figure 7. Power dissipation vs. case
temperature for TO-220FP
IC
60
40
20
0
0
2
VCE(V)
4
(A)
1
3
80
100
11V
9V
13V
VGE=15V
AM17360v1
IC
60
40
20
0
0
2
VCE(V)
4
(A)
1
3
80
100
11V
9V
13V
VGE=15V
7V
AM17361v1
IC
60
40
20
0
7
9
VGE(V)
11
(A)
8
10
80
100
TJ=-40°C
TJ=25°C
TJ=175°C
VCE=5V
AM17362v1
VGE(th)
0.9
0.8
0.7
0.6
-50
0
TJ(°C)
100
norm
50
1.0
150
AM17369v1
PTOT
120
80
40
0
0
50
TCASE(°C)
100
(W)
25
75
160
200
125
150
240
AM17364v1
PTOT
16
8
0
0
50
TCASE(°C
100
(W)
25
75
24
32
125
150
AM17365v1



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