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STGF30H60DF 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGF30H60DF
功能描述  600 V, 30 A high speed trench gate field-stop IGBT
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF30H60DF 数据表(HTML) 5 Page - STMicroelectronics

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STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
-
50
-
ns
tr
Current rise time
15
ns
(di/dt)on
Turn-on current slope
1600
A/µs
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
-
47
-
ns
tr
Current rise time
17
ns
(di/dt)on
Turn-on current slope
1400
A/µs
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
-
20
-
ns
td(off)
Turn-off delay time
160
ns
tf
Current fall time
60
ns
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
-
22
-
ns
td(off)
Turn-off delay time
146
ns
tf
Current fall time
88
ns
tsc
Short circuit withstand time
VCC ≤ 360 V, VGE = 15 V
3
6
-
µs
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
Eon (1)
Turn-on switching losses
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V
-0.35
-
mJ
Eoff
(2)
Turn-off switching losses
0.40
mJ
Ets
Total switching losses
0.75
mJ
Eon (1)
Turn-on switching losses
VCE = 400 V, IC = 230 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
0.61
mJ
Eoff
(2)
Turn-off switching losses
0.84
mJ
Ets
Total switching losses
1.45
mJ
1.
Energy losses include reverse recovery of the diode.
2.
Turn-off losses include also the tail of the collector current.



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