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STGF30H60DF 数据表(PDF) 10 Page - STMicroelectronics

部件名 STGF30H60DF
功能描述  600 V, 30 A high speed trench gate field-stop IGBT
PDF  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF30H60DF 数据表(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
10/24
DocID022363 Rev 3
Figure 20. Diode VF vs. forward current
Figure 21. Switching losses vs. gate resistance
Figure 22. Switching losses vs. collector
current
Figure 23. Switching losses vs temperature
Figure 24. Short circuit time & current vs. VGE
VF
1.8
1.6
1.4
1.2
15
20
IF(A)
30
(V)
25
2.0
2.2
35
2.4
2.6
TJ=-40°C
TJ=25°C
TJ=175°C
40 45
50
55
AM17368v1
E
1000
750
500
0
RG(
Ω)
20
(µJ)
10
VCC= 400V, VGE=15V
250
Eon
Eoff
40
30
IC= 30A, TJ=175°C
1250
1500
AM17374v1
E
1200
800
400
15
IC(A)
35
(µJ)
25
VCC= 400V, VGE=15V
0
Eon
Eoff
55
45
RG= 10
Ω, TJ=175°C
1600
2000
AM17375v1
E
600
500
400
25
TJ(°C)
75
(µJ)
50
VCC= 400V, VGE=15V
300
Eon
Eoff
125
100
RG= 10
Ω, IC=30A
700
800
150
AM17376v1
tsc
15
10
5
8
VGE(V)
12
(µs)
10
VCC= 360V, RG= 10
Ω
0
tSC
ISC
14
20
ISC(A)
150
100
50
0
200
300
250
350
400
450
AM17377v1



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