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STGF30H60DF 数据表(PDF) 1 Page - STMicroelectronics |
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STGF30H60DF 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 24 page ![]() This is information on a product in full production. March 2013 DocID022363 Rev 3 1/24 24 STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short circuit rated • Ultrafast soft recovery antiparallel diode Applications • Inverter • UPS • PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. 1 3 1 2 3 1 2 3 1 2 3 D²PAK TO-220FP TO-220 TO-247 TAB TAB C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Package Packaging STGB30H60DF GB30H60DF D²PAK Tape and reel STGF30H60DF GF30H60DF TO-220FP Tube STGP30H60DF GP30H60DF TO-220 STGW30H60DF GW30H60DF TO-247 www.st.com |
类似零件编号 - STGF30H60DF |
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类似说明 - STGF30H60DF |
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