STGD19N40LZ datasheet(7/17 Pages) STMICROELECTRONICS

部件名	STGD19N40LZ

功能描述	Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 17 page

DocID024506 Rev 6

7/17

STGD19N40LZ

Electrical characteristics

Figure 8. Output characteristics (TJ= -40 °C)

Figure 9. Transfer characteristics

Figure 10. Collector cut-off current vs.

temperature

Figure 11. Normalized collector emitter voltage

vs. temperature (IC = 2 mA)

Figure 12. Normalized gate threshold voltage

vs. temperature

Figure 13. Normalized collector emitter on

voltage vs. temperature (IC = 10 A)

AM17132v1

02468

VGE= 3.5 V

VGE= 5 V

VGE= 4 V

VGE= 4.5 V

VGE= 5.5 V

VGE= 6 V

IC(A)

VCE (V)

AM17133v1

012345

VCE = 6 V

IC (A)

VGE (V)

TJ = -40°C

TJ= -25°C

TJ = 175°C

AM17134v1

0.01

0.1

-75

-25

125

Ices

(μA)

Tc (°C)

VCE = 200 V

VCE = 350 V

VGE= 0

AM17135v1

0.985

0.99

0.995

1.005

-75

-25

125

Tc (°C)

Vces

(norm)

Ic = 2 mA

Vge = 0 V

AM17136v1

0.6

0.7

0.8

0.9

1.1

-75

-25

125

Tc (°C)

VGE(th)

(norm)

VCE = VGE

IC = 1 mA

AM17137v1

0.96

0.97

0.98

0.99

1.01

1.02

1.03

1.04

1.05

-75

-25

125

Tc (°C)

VGE = 4.5 V

IC = 10 A

VCE(sat)

(norm)

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